Thickness dependent band structure ofα-bismuthene grown on epitaxial graphene

Along with the great interest in two-dimensional elemental materials that has emerged in recent years, atomically thin layers of bismuth have attracted attention due to physical properties on account of a strong spin-orbit coupling. Thickness dependent electronic band structure must be explored over the whole Brillouin zone in order to further explore their topological electronic properties. The anisotropic band structures along zig-zag and armchair directions of α-bismuthene (α-Bi) were resolved using the two-dimensional mapping of angle-resolved photoemission spectra. An increase in the number of layers from 1- to 2-bilayers (BLs) shifts the top of a hole band onΓ¯-X¯1line to high wavenumber regions. Subsequently, an electron pocket onΓ¯-X¯1line and a hole pocket centred atΓ¯point appears in the 3 BL α-Bi. Gapless Dirac-cone features with a large anisotropy were clearly resolved onX¯2point in the 1-BL and 2-BL α-Bi, which can be attributed to the strong spin-orbit coupling and protection by the nonsymmorphic symmetry of the α-Bi lattice.