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Updated: Sep 30, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Transport and spectral properties of the XX+XXZ diode and stability to dephasing
Kang Hao Lee1, Vinitha Balachandran1, Chu Guo2,3
1Science and Math Cluster, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore.
Abstract:
We study the transport and spectral property of a segmented diode formed by an XX+XXZ spin chain. This system has been shown to become an ideal rectifier for spin current for large enough anisotropy. Here we show numerical evidence that the system in reverse bias has signatures pointing toward the existence of three different transport regimes depending on the value of the anisotropy: ballistic, diffusive, and insulating. In forward bias we observe two regimes, ballistic and diffusive. The system in forward and reverse bias shows significantly different spectral properties, with distribution of rapidities converging toward different functions. In the presence of dephasing the system becomes diffusive, rectification is significantly reduced, the relaxation gap increases, and the spectral properties in forward and reverse bias tend to converge. For large dephasing the relaxation gap decreases again as a result of quantum Zeno physics.
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