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Switching-behavior improvement in HfO2/ZnO bilayer memory devices by tailoring of interfacial and microstructural

Wei Zhang1, Jianzhang Lei1, Yixian Dai1

  • 1College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.

Nanotechnology
|March 16, 2022
PubMed

Keywords:
HfO2/ZnO bilayerRRAM.bipolar switchingoxygen vacanciessputtering

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