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Patterning of graphene using wet etching with hypochlorite and UV light
Minfang Zhang1, Mei Yang2, Yuki Okigawa3
1CNT Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Japan. m-zhang@aist.go.jp.
Scientific Reports
|March 17, 2022
Summary
A new wet etching method using hypochlorite and UV light enables rapid, low-cost graphene patterning for micro- and nano-electronics. This technique successfully created patterned graphene and functional graphene field-effect transistor arrays.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- Graphene patterning is crucial for advanced electronic devices.
- Existing methods can be complex, costly, or difficult to scale.
Purpose of the Study:
- To develop a simple, low-cost, and scalable wet etching technique for graphene patterning.
- To demonstrate the efficacy of this method for fabricating graphene-based devices.
Main Methods:
- Utilized a hypochlorite solution combined with ultraviolet (UV) light irradiation for selective graphene removal.
- Characterized patterned graphene using Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy.
- Fabricated graphene field-effect transistor (GFET) arrays.
Main Results:
- Successfully achieved well-defined graphene patterns at the micrometer scale.
- GFET arrays exhibited desirable current-voltage characteristics.
- Maximum carrier mobility of approximately 1600 cm²/Vs was recorded.
Conclusions:
- The developed wet etching technique is a feasible and effective method for graphene patterning.
- This approach supports the fabrication of high-performance graphene-based nano-electronic devices.
- The simplicity, low cost, and scalability offer significant advantages for industrial applications.
