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Published on: June 28, 2018
Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
A A Shashkin1, M Yu Melnikov1, V T Dolgopolov1
1Institute of Solid State Physics, Chernogolovka, Moscow District, 142432, Russia.
Abstract:
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature [Formula: see text], at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value [Formula: see text] decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of [Formula: see text] cannot be described by existing theories. The results indicate the spin-related origin of the effect.
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