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Updated: Sep 29, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Atomic Layer Deposited Ti₂ O₃ Thin Films.

K Manjunath¹, A Saraswat¹, D Samrat¹

¹International Centre for Materials Science, New Chemistry Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bengaluru, 560064, India.

Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry

|March 25, 2022

Summary

This summary is machine-generated.

Atomic layer deposition prepared Ti2O3 thin films exhibit an insulator-metal transition around 80 K. This transition, driven by the two-band model and crystallographic ratio, significantly alters electrical resistivity with temperature.

Keywords:

Ti2O3 atomic layer deposition corundum structure insulator-metal transition thin films

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Published on: March 13, 2018

Area of Science:

Materials Science
Solid State Physics
Thin Film Technology

Background:

Titanium sesquioxide (Ti2O3) is a well-known strongly correlated electron material.
Understanding its electrical properties is crucial for potential applications.

Purpose of the Study:

To investigate the electrical resistivity of Ti2O3 thin films.
To analyze the insulator-metal transition in these films.

Main Methods:

Atomic Layer Deposition (ALD) for thin film preparation.
Electrical resistivity measurements as a function of temperature.

Main Results:

Ti2O3 thin films were successfully prepared and found to be stable for up to three weeks.
An insulator-metal transition was observed at approximately 80 K.
A significant resistivity change of 3-4 orders of magnitude was recorded during the transition.
The observed anomalous resistivity increase aligns with the predictions of the two-band model.

Conclusions:

The crystallographic c/a ratio influences the energy band interval, thereby affecting the temperature-dependent electrical resistivity.
Ti2O3 thin films demonstrate a distinct insulator-metal transition behavior.
The findings contribute to the understanding of correlated electron systems and thin film properties.