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Polarization Gradient Effect of Negative Capacitance LTFET.

Hao Zhang1, Shupeng Chen1, Hongxia Liu1

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Summary

This study introduces a novel L-shaped tunneling field effect transistor (LTFET) with a ferroelectric gate. The negative capacitance LTFET demonstrates a steeper subthreshold swing due to line tunneling, improving device performance.

Keywords:
NC-LTFETferroelectric gate oxidepolarization gradientsubthreshold swing

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Area of Science:

  • Semiconductor device physics
  • Materials science

Background:

  • Tunneling field-effect transistors (TFETs) offer potential for low-power electronics.
  • Steeper subthreshold swing (SS) is crucial for reducing power consumption in TFETs.
  • Ferroelectric materials can enhance TFET performance through negative capacitance (NC).

Purpose of the Study:

  • To propose and analyze an L-shaped tunneling field-effect transistor (LTFET) incorporating a ferroelectric gate oxide layer (Si: HfO2).
  • To investigate the impact of negative capacitance (NC) on the electrical characteristics of the LTFET.
  • To explore the polarization gradient effect in NC-TFETs.

Main Methods:

  • Device simulation using Synopsys Sentaurus TCAD.
  • Analysis of electrical characteristics, including subthreshold swing (SS) and on-state current (Ion).
  • Investigation of tunneling mechanisms (line vs. diagonal) and their dependence on gate voltage and polarization gradient.

Main Results:

  • The proposed negative capacitance LTFET (NC-LTFET) achieves a steeper subthreshold swing (SS = 18.4 mV/dec) compared to conventional LTFETs.
  • Line tunneling at low gate voltage, driven by non-uniform voltage across the gate oxide, is identified as the mechanism for improved SS.
  • The polarization gradient effect is reported for the first time in NC-TFETs and found to influence the dominant tunneling mechanism and degrade SS and Ion at higher gradient parameters.

Conclusions:

  • The NC-LTFET demonstrates superior subthreshold swing due to optimized tunneling mechanisms.
  • The polarization gradient effect is a critical factor in NC-TFET performance and must be considered.
  • Further optimization is needed to mitigate the negative impact of the polarization gradient effect on device performance.