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A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications
Guangqian Zhu1, Zhaoshu Fu1, Tingting Liu1
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Abstract:
This work presents a high-precision high-order curvature-compensated bandgap voltage reference (BGR) for battery monitoring applications. The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔVEB. The proposed circuit additionally introduces high-order curvature compensation in the generation of ΔVEB, such that it presents high-order temperature effects complementary to VEB. Fabricated using a 0.18 µm BCD process, the proposed BGR generates a 2.5 V reference voltage with a minimum temperature coefficient of 2.65 ppm/°C in the range of -40 to 125 °C. The minimum line sensitivity is 0.023%/V when supply voltage varies from 4.5 to 5.5 V. The BGR circuit area is 382 × 270 μm2, and the BMIC area is 2.8 × 2.8 mm2.
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