Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

IR Spectrometers

IR Spectrometers

There are two main infrared (IR) spectrophotometers: dispersive IR spectrometers and Fourier transform infrared (FTIR) spectrometers. In a dispersive IR spectrometer, a beam of infrared radiation produced by a hot wire is divided into two parallel equal-intensity beams using mirrors. One beam passes through the sample, while another is a reference beam. The beams then move through the monochromator, which separates the radiations into a continuous spectrum of different frequencies. The...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Infrared (IR) Spectroscopy: Overview

Infrared (IR) Spectroscopy: Overview

When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
Different compounds display unique properties due to their...

IR Absorption Frequency: Hybridization

IR Absorption Frequency: Hybridization

Hydrocarbons such as alkanes, alkenes, and alkynes show characteristic C–H stretching absorption bands. These IR stretching frequencies depend on the hybridization of the involved carbon atom and can be explained in terms of the s character of each hybridized atomic orbital.
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

High-Extinction-Ratio Chiral Mid-Wave Infrared Photodetector Using Trapezoidal Si Pillars.

Micromachines·2026

Same author

Design of Long-Wave Fully Polarized HgCdTe Photodetector Based on Silicon Metasurface.

Micromachines·2025

Same author

Ultra-large bandwidth fully polarized photodetectors based on displacement-induced chiral dielectric metasurfaces.

Applied optics·2025

Same author

Switchable terahertz chiral metasurface for linear and circular dichroism.

Optics express·2025

Same author

Dynamically tunable robust ultrahigh-Q merging bound states in the continuum in phase-change materials metasurface.

Nanophotonics (Berlin, Germany)·2025

Same author

Ultrahigh-reflectivity chiral mirrors based on the metasurface of the quarter-waveplate.

Heliyon·2024

Search research articles

Related Experiment Video

Updated: Sep 29, 2025

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Published on: March 22, 2019

Mid-Infrared Sensor Based on Dirac Semimetal Coupling Structure.

Yuxiao Zou^1,2, Ying Liu³, Guofeng Song^1,2

¹Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Sensors (Basel, Switzerland)

|March 26, 2022

Summary

This study introduces a novel mid-infrared sensor using Dirac semimetals and graphene. The designed structure significantly enhances the Goos-Hänchen shift for highly sensitive refractive index detection.

Keywords:

Dirac semimetal Goos–Hänchen shift LRSPR SPP biochemical sensor mid-infrared

More Related Videos

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Published on: August 30, 2012

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Related Experiment Videos

Last Updated: Sep 29, 2025

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Published on: March 22, 2019

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Published on: August 30, 2012

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Area of Science:

Condensed Matter Physics
Nanophotonics
Sensor Technology

Background:

Surface plasmon resonance (SPR) and surface plasmon polaritons (SPPs) are crucial for optical sensing.
Dirac semimetals exhibit unique electronic properties exploitable in optoelectronic devices.
Mid-infrared (MIR) sensing applications require high sensitivity and tunability.

Purpose of the Study:

To investigate a multilayer structure coupling long-range surface plasmon resonance (LRSPR) with SPPs for enhanced Goos-Hänchen (GH) shift.
To explore the potential of Dirac semimetals in developing sensitive MIR sensors.
To analyze the influence of refractive index and Fermi energy on the GH shift.

Main Methods:

Utilized a generalized transport matrix method to study the reflection coefficient and phase.
Simulated a multilayer structure comprising dielectric layers and a Dirac semimetal coupled with graphene.
Investigated the GH shift in the mid-infrared band.

Main Results:

Achieved substantial enhancement of the Goos-Hänchen shift in the Dirac semimetal multilayer structure.
Demonstrated significant sensitivity exceeding 2.7×10^7 λ/RIU.
Established a strong correlation between GH shift and changes in the sensing medium's refractive index and Dirac semimetal's Fermi energy.

Conclusions:

The proposed coupled structure offers a tunable and highly sensitive platform for MIR sensing.
Dirac semimetals, when integrated into specific multilayer configurations, show great promise for advanced sensor applications.
This work presents a novel, simple-structured MIR sensor with significant potential for real-world applications.