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Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field
Qi Lu1, Ping Li2, Zhixin Guo3
1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.
Researchers tuned the spin Hall angle in bismuth selenide (Bi2Se3) by 600% using electric fields. This breakthrough enables low-power, tunable spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Spin Hall angle is crucial for energy-efficient spintronic devices.
- Bismuth selenide (Bi2Se3) exhibits a large intrinsic spin Hall angle, enabling strong spin-orbit torques.
Purpose of the Study:
- To demonstrate effective and reversible tuning of the spin Hall angle in Bi2Se3.
- To achieve significant enhancement of the spin Hall angle using low power methods.
Main Methods:
- Applying a bipolar electric field across a piezoelectric substrate to tune Bi2Se3.
- Investigating the effects of charge doping and piezoelectric strain on spin properties.
Main Results:
- Achieved a reversible enhancement of the spin Hall angle in Bi2Se3 by approximately 600%.
- Demonstrated asymmetric tuning of the spin Hall angle via electric field application.
Conclusions:
- Electric field-induced charge doping and piezoelectric strain enhance the spin Hall angle by modifying spin Berry curvature.
- This work provides a pathway for developing tunable, low-power spintronic devices.
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