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High-Performance Planar-Type Photodetector Based on Hot-Pressed CsPbBr3 Wafer.

Xiao Zhao1,2, Shimao Wang2,3, Fuwei Zhuge4

  • 1School of Environmental Science and Optoelectronic Technology, University of Science and Technology of China, Hefei 230026, People's Republic of China.

The Journal of Physical Chemistry Letters
|March 29, 2022
PubMed
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This summary is machine-generated.

A new hot-pressed (HP) method simplifies CsPbBr3 wafer fabrication, overcoming limitations of traditional techniques. This approach yields ultrasensitive photodetectors with fast response times, ideal for weak light detection.

Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Common CsPbBr3 single crystal growth methods, such as melt and solution techniques, face challenges including high costs and poor shape control.
  • Developing efficient and controllable methods for CsPbBr3 crystal fabrication is crucial for advanced optoelectronic applications.

Purpose of the Study:

  • To introduce a facile hot-pressed (HP) approach for preparing CsPbBr3 wafers.
  • To investigate the impact of HP temperature on the phase purity and properties of CsPbBr3 wafers.
  • To evaluate the performance of photodetectors fabricated using HP-CsPbBr3 wafers for weak light detection.

Main Methods:

  • A hot-pressing (HP) technique was employed to synthesize CsPbBr3 wafers.
  • The influence of varying HP temperatures on CsPbBr3 wafer characteristics was systematically studied.

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  • Planar-type photodetectors were fabricated using the optimized HP-CsPbBr3 wafers.
  • Main Results:

    • The optimal HP temperature for achieving phase-pure, shape-regular, and dense CsPbBr3 wafers was determined to be 150 °C.
    • CsPbBr3 wafer-based photodetectors demonstrated an ultrasensitive response to weak light.
    • Key performance metrics for the photodetectors included a responsivity of 19.79 A W⁻¹, an external quantum efficiency of 4634%, and a detectivity of 2.14 × 10¹³ Jones.
    • The devices exhibited a fast response speed with a rise time of 40.5 μs and a fall time of 10.0 μs.

    Conclusions:

    • The hot-pressed (HP) method provides a facile and effective route for fabricating high-quality CsPbBr3 wafers.
    • The optimized HP-CsPbBr3 wafers enable the development of highly sensitive and fast-responding photodetectors for weak light detection applications.
    • This work presents a promising advancement in CsPbBr3-based optoelectronic device technology.