How Hole Injection Accelerates Both Ion Migration and Nonradiative Recombination in Metal Halide Perovskites

Ion migration, hole trapping, and electron-hole recombination are common processes in metal halide perovskites. We demonstrate using ab initio non-adiabatic molecular dynamics and time-domain density functional theory that they are intricately related and strongly influence each other. The hole injection accelerates ion migration by decreasing the diffusion barrier and shortening the migration length. The injected hole also promotes the nonradiative charge recombination by strengthening electron-phonon interactions in the low-frequency region and prolonging the quantum coherence time. The synergy stems from the soft perovskite lattice and response of the valence band maximum to the Pb-I lattice distortion induced by the hole. This work provides important insights into the influence of ion mobility and hole injection on the performance of perovskite solar cells and suggests that high concentration of holes should be avoided.