Nanoscale pattern formation on silicon surfaces bombarded with a krypton ion beam: experiments and simulations

The nanoscale patterns produced by bombardment of the (100) surface of silicon with a 2 keV Kr ion beam are investigated both experimentally and theoretically. In our experiments, we find that the patterns observed at high ion fluences depend sensitively on the angle of incidence Θ. For Θ values between 74° and 85°, we observe five decidedly different kinds of morphologies, including triangular nanostructures traversed by parallel-mode ripples, long parallel ridges decorated by short-wavelength ripples, and a remarkable mesh-like morphology. In contrast, only parallel-mode ripples are present for low ion fluences except for Θ = 85°. Our simulations show that triangular nanostructures that closely resemble those in our experiments emerge if a linearly dispersive term and a conserved Kuramoto-Sivashinsky nonlinearity are appended to the usual equation of motion. We find ridges traversed by ripples, on the other hand, in simulations of the Harrison-Pearson-Bradley equation (Harrisonet al2017Phys. Rev.E96032804). For Θ = 85°, the solid surface is apparently stable and simulations of an anisotropic Edwards-Wilkinson equation yield surfaces similar to those seen in our experiments. Explaining the other two kinds of patterns we find in our experiments remains a challenge for future theoretical work.