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Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO
Yue Wang1, Minjae Kim1, Malik Abdul Rehman1
1Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Abstract:
The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset first bipolar property without an initial electroforming process in LTO. We used oxygen-deficient ZnO as an interlayer between LTO and a W electrode to clarify whether oxygen migration activates LTO as the Mott transition. ZnO oxygen deficiency provides oxygen ion migration paths as well as a reservoir, facilitating oxygen migration from LTO to the W electrode. Thus, including the ZnO interlayer improved oxygen migration between LTO and the W electrode, achieving a 10-fold increased on/off current ratio. The current research contributes to a better understanding of valence change Mott memory by exploring the LTO resistive switching mechanism and ZnO interlayer influences on the oxygen migration process.
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