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Updated: Sep 27, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

Genqiang Chen1,2, Wei Wang1,2, Fang Lin1,2

  • 1Key Laboratory for Physical Electronics and Devices, Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China.

Materials (Basel, Switzerland)
|April 12, 2022
PubMed

Keywords:
MOSFETannealingheteroepitaxial diamond

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