Related Experiment Video
Updated: Sep 27, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Robust non-integer conductance in disordered 2D Dirac semimetals
Ilias Amanatidis1, Ioannis Kleftogiannis2
1Department of Physics, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel.
Abstract:
We study the conductanceGof 2D Dirac semimetal nanowires at the presence of disorder. For an even nanowire lengthLdetermined by the number of unit cells, we find non-integer values forGthat are independent ofLand persist with weak disorder, indicated by the vanishing fluctuations ofG. The effect is created by a combination of the scattering effects at the contacts (interface) between the leads and the nanowire, an energy gap present in the nanowire for evenLand the topological properties of the 2D Dirac semimetals. Unlike conventional materials the reducedGdue to the scattering at the interface, is stabilized at non-integer values inside the nanowire, leading to a topological phase for weak disorder. For strong disorder the system leaves the topological phase and the fluctuations ofGare increased as the system undergoes a transition/crossover toward the Anderson localized (insulating) phase, via a non-standard disordered phase. We study the scaling and the statistics ofGat these phases. In addition we have found that the effect of robust non-integerGdisappears for oddL, which results in integerG, determined by the number of open channels in the nanowire, due to resonant scattering.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Types of Semiconductors
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

