Large magnetodielectric response of PST/LSMO/LCMO film over a wide temperature range
Ying Chen1,2,3, Fen Xue3, Zhengyang Zhou3
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences 865 Changning Road Shanghai 200050 People's Republic of China lcwu@dhu.edu.cn.
Abstract:
Pb0.6Sr0.4TiO3/La0.7Sr0.3MnO3/La0.7Ca0.3MnO3 (PST/LSMO/LCMO) film is grown on Si substrate by chemical solution deposition method. The film crystallizes perfectly into perovskite phases with a random crystalline orientation. The La0.7Sr0.3MnO3/La0.7Ca0.3MnO3/Si layer exhibits low resistivity and obvious negative magnetoresistivity (MR); the PST/LSMO/LCMO film shows notable magnetocapacitance (MC) above 350 K, from 102.9% to 29.5%. Near room temperature, there is no distinguished magnetoelectric coupling; the MC is 34.3% @ 250 K, 29.5% @ 300 K and 32.8% @ 350 K respectively. The mechanism can be explained in light of the Maxwell-Wagner (MW) model and the enhanced MR origin from the successive mixed manganite phases and spin dependent tunneling across the junctions of PST/LSMO/LCMO. This work provides a new approach for designing and developing novel composites with promising MC.
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