Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid
Artem Shushanian1, Daisuke Iida2, Zhe Zhuang2
1Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi Arabia.
Abstract:
We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
Related Concept Videos
Electrogravimetric Analysis: Overview
To test the completeness of the...
Enolate Mechanism Conventions
Oxidation of Alcohols
The process of oxidation in a chemical reaction is observed in any of the three forms:
Oxidation of Alkenes: Syn Dihydroxylation with Osmium Tetraoxide
Oxidative Cleavage of Alkenes: Ozonolysis
Ozone is a symmetrical bent molecule stabilized by a resonance structure.
Oxidation of Alkenes: Anti Dihydroxylation with Peroxy Acids


