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Selected properties of Al Zn O thin films prepared by reactive pulsed magnetron sputtering using a two-element
Witold Posadowski1, Artur Wiatrowski1, Jarosław Domaradzki1
1Wroclaw University of Science and Technology, Faculty of Electronics, Photonics and Microsystems, Janiszewskiego 11/17, 50-372 Wrocław, Poland.
Abstract:
Al Zn O thin films were obtained by reactive pulsed magnetron sputtering. A two-element Zn/Al planar target was used as source material prepared in the form of a Zn disc (100 mm diameter) with Al rings pressed into its surface. The sputtering processes were carried out in a mixture of argon and oxygen. The films were deposited with a discharge power of P E = 400 W, which corresponded to a power density on the target surface of approximately 5 W/cm2. The films were deposited on glass strip substrates, placed symmetrically over the target, making it possible to obtain films with different composition and thickness. The film sheet resistance was measured as a function of the distance from the target axis on both sides (front and back) of the substrate. The lowest measured resistivity was about 4 × 10-3 Ω·cm. Additionally, optical properties, surface topography, and elemental composition were determined in selected areas of the substrate.
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