Correction: In-depth first-principle study on novel MoS2 polymorphs
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Updated: Sep 27, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Håkon Eidsvåg1, Murugesan Rasukkannu1, Dhayalan Velauthapillai1
1Department of Computing, Mathematics and Physics, Western Norway University of Applied Sciences Inndalsveien 28, Box 5063 Bergen Norway heid@hvl.no.
Abstract:
[This corrects the article DOI: 10.1039/D0RA10443D.].
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