Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
Electrostatic Boundary Conditions01:16

Electrostatic Boundary Conditions

622
Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
622

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Low Temperature Growth of High-Quality Wurtzite Ferroelectric Through Quasi-van der Waals Epitaxy.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Topological piezoelectricity in bulk ferroelectrics.

Nature materials·2026
Same author

Deep learning-driven intelligent mesoscopic model (DeepMeso): a case study on ferroelectrics.

National science review·2026
Same author

Optimizing Traps and Dihedral Angles to Modulate Charge Transport Behavior for High-Temperature Dielectric Energy Storage.

Nature communications·2026
Same author

Unveiling the protective mechanism of rapid microwave heating on Lactoferrin: insights from structural integrity and bioactivity.

Food research international (Ottawa, Ont.)·2026
Same author

Ordered Polar Topological Domains Enabling Giant Second-Harmonic Generation in Ferroelectric Nematic Liquid Crystals.

Advanced materials (Deerfield Beach, Fla.)·2026

Related Experiment Video

Updated: Sep 26, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.0K

Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary.

Jing Wang1,2, Ruixue Zhu3, Ji Ma2,4

  • 1Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China.

ACS Applied Materials & Interfaces
|April 18, 2022
PubMed
Summary

Researchers achieved a significant tunneling electroresistance effect in BiFeO3 nanoisland edges, paving the way for advanced data storage and computing applications.

Keywords:
BiFeO3 nanoislandsdislocationsferroelectric tunneling junctionflexoelectric effecttunneling electroresistance effect

More Related Videos

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.2K
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.9K

Related Experiment Videos

Last Updated: Sep 26, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.0K
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.2K
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

8.9K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Ferroelectric tunneling junctions (FTJs) are crucial for high-density data storage and neural network computing.
  • Achieving robust polarization and low leakage current in ultrathin ferroelectric films for FTJs remains a challenge.
  • Reliable operating performance in FTJs depends on both polarization and minimal leakage.

Purpose of the Study:

  • To investigate the tunneling electroresistance (TER) effect in BiFeO3 nanoisland edges.
  • To explore the contribution of intrinsic ferroelectric polarization to barrier height modulation.
  • To enhance the TER effect using photoinduced carriers and flexoelectric fields.

Main Methods:

  • Fabrication of a tunneling barrier using BiFeO3 nanoisland edges and a conducting phase boundary.
  • Utilizing nanoscale electrodes for precise interface engineering.
  • Introducing photoinduced carriers and leveraging dislocation-induced flexoelectric fields.

Main Results:

  • Observed a large TER effect of approximately 1.0 × 10^4% across the BiFeO3 nanoisland edge.
  • Demonstrated that intrinsic ferroelectric polarization significantly tunes the barrier height.
  • Enhanced the TER effect to approximately 1.6 × 10^4% with photoinduced carriers and flexoelectric fields.

Conclusions:

  • BiFeO3 nanoisland edges offer a promising platform for high-performance FTJs.
  • The interplay of ferroelectric polarization, engineered interfaces, and flexoelectricity can significantly boost TER.
  • This work provides a pathway for developing next-generation electronic devices.