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Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory.

Tiantian Li¹, Yong Wang², Wei Li^2,3

¹Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, 19716, USA.

Advanced Materials (Deerfield Beach, Fla.)

|April 18, 2022

Summary

Optical phase-change materials enable memory devices. Indium selenide (In2Se3) demonstrates fast, reversible switching between layered structures using a single nanosecond pulse, improving device performance.

Keywords:

In 2Se 3 all-optical switching optical memory optical switching structural phase transitions

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Area of Science:

Materials Science
Nanotechnology
Photonics

Background:

Optical memory devices rely on phase transitions.
Slow amorphous-crystalline transitions limit device scalability and performance.

Purpose of the Study:

To demonstrate nonvolatile and reversible switching in indium selenide (In2Se3) using an integrated photonic platform.
To investigate the atomistic pathways and characteristics of crystalline-crystalline phase transitions in In2Se3.

Main Methods:

Utilized an integrated photonic platform for optical switching.
Employed high-resolution pair distribution function to analyze atomistic transition pathways.
Characterized broadband refractive index contrast, optical transparency, and volumetric effects in molecular-beam-epitaxy-grown thin films.
Performed ab initio calculations for comparison.

Main Results:

Achieved nonvolatile and reversible switching between two layered structures of In2Se3 with a single nanosecond pulse.
Identified interlayer shear glide and isosymmetric phase transition as mechanisms for low re-configurational entropy switching.
Quantified broadband refractive index contrast, optical transparency, and volumetric effects.
Measured an incremental linear loss rate of 3.3 GHz in a nonlinear resonator.

Conclusions:

Fast, reversible crystalline-crystalline phase transitions in In2Se3 offer a promising alternative to traditional amorphous-crystalline transitions for optical memory devices.
The demonstrated switching mechanism enhances device scalability and performance.