Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

531
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
531
P-N junction01:11

P-N junction

722
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
722
Biasing of P-N Junction01:16

Biasing of P-N Junction

983
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
983
Diode: Reverse bias01:14

Diode: Reverse bias

1.0K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.0K
Diode: Forward bias01:20

Diode: Forward bias

1.4K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

351
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
351

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Guiding the De Novo Synthesis of Open Metal Frameworks Through Low-Symmetry Bent Linker for Hydrogen Isotope Separation.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Fe-C Micro-Electrolysis of HMX: Performance Optimization, Degradation Mechanisms, and Toxicity Evolution Revealed by Toxicogenomics-Based Assay.

Toxics·2026
Same author

Peril and pleasure: examining the impact of risk perception on behavioral intentions of mountain outdoor sports tourists.

Frontiers in psychology·2026
Same author

Differential patterns and controls of N<sub>2</sub>O emission from coastal rivers with varying land uses and salinity in northern China.

Journal of environmental management·2026
Same author

Gas-Phase and Condensed-Phase Synergy in a Nonflammable Electrolyte for Highly Stable Sodium-Ion Batteries.

Journal of the American Chemical Society·2026
Same author

Reactive Hydrogen-Driven Dehydroxylation of Hydroxyapatite Enables Anti-Ostwald Ripening of Ag Nanoparticles for Ethanol Valorization to Aromatics.

Journal of the American Chemical Society·2026

Related Experiment Video

Updated: Sep 26, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Asymmetric heterojunctions between size different 2D flakes intensify the ionic diode behaviour.

He Ma1, Xiaoheng Jin2, Yun-Zhe Du1

  • 1State Key Laboratory of Fine Chemicals, Liaoning Key Laboratory for Catalytic Conversion of Carbon Resources, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China. guangpinghao@dlut.edu.cn.

Chemical Communications (Cambridge, England)
|April 19, 2022
PubMed
Summary

Researchers created asymmetric heterojunctions using different-sized 2D flakes, resulting in unique charge distribution and ionic diode behavior with a high rectification ratio.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

Related Experiment Videos

Last Updated: Sep 26, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Two-dimensional (2D) materials offer unique electronic properties.
  • Heterojunctions are crucial for controlling charge transport.
  • Asymmetric interfaces are key for diode functionalities.

Purpose of the Study:

  • To investigate the formation of asymmetric heterojunctions between laterally size-different 2D flakes.
  • To explore the resulting charge distribution at the nanocontact interface.
  • To demonstrate ionic diode-like transport behavior and quantify its performance.

Main Methods:

  • Facile synthesis of asymmetric heterojunctions.
  • Fabrication of nanocontacts using laterally size-different 2D flakes.
  • Characterization of charge distribution gradients.
  • Measurement of ionic transport properties and rectification ratio.

Main Results:

  • Successful facile formation of asymmetric heterojunctions.
  • Observation of a prominent gradient in charge distribution at the nanocontact interface.
  • Demonstration of ionic diode-like transport behavior.
  • Achieved a high rectification ratio of 110.

Conclusions:

  • Asymmetric heterojunctions from size-different 2D flakes enable controlled ionic transport.
  • The charge distribution gradient is the key mechanism for diode behavior.
  • This work presents a novel approach for designing advanced ionic devices.