Competitive Hydrogen Migration in Silicon Nitride Nanoclusters: Reaction Kinetics Generalized from Supervised Machine
Yeseul Choi1, Andrew J Adamczyk1
1Department of Chemical Engineering, Auburn University, 212 Ross Hall, Auburn, Alabama 36830, United States.
This study calculates hydrogen shift reaction rates in silicon nitrides up to six atoms. Machine learning models predict energy barriers for these reactions, aiding in understanding silicon nitride chemistry.
Area of Science:
- Computational Chemistry
- Materials Science
- Chemical Kinetics
Background:
- Hydrogen shift reactions are crucial in silicon nitride chemistry.
- Understanding reaction pathways and kinetics is essential for material design and synthesis.
Purpose of the Study:
- To calculate rate coefficients for 52 hydrogen shift reactions in silicon nitrides.
- To investigate the influence of reaction type and molecular structure on kinetic parameters.
- To develop machine learning models for predicting reaction energy barriers.
Main Methods:
- G3//B3LYP composite method for electronic structure calculations.
- Statistical thermodynamics for rate coefficient determination.
- Supervised machine learning for predictive modeling.
Main Results:
- Identified three main types of hydrogen shift reactions (N-Si, Si-Si endothermic, Si-Si exothermic).
- Exothermic Si-Si shifts involve a stable intermediate and a two-step pathway.
- Kinetic parameters (pre-exponential factors and activation energies) were computed for various silicon nitrides.
- Machine learning models successfully predicted energy barriers based on molecular descriptors.
Conclusions:
- The type of hydrogen shift reaction significantly impacts kinetic parameters.
- Computational and machine learning approaches provide valuable insights into silicon nitride reaction mechanisms.
- Findings can guide the development of new silicon nitride materials and processes.
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