Quantifying the Improvement in Dielectric Properties of BaSrTiO3-Based Ceramics by Adding MgO

Kun Dai1, Ruina Ma1, Xing Wang1

  • 1Key Lab for New Type of Functional Materials in Hebei Province, Tianjin Key Lab Material Laminating Fabrication and Interface, School of Material Science and Engineering, Hebei University of Technology, Tianjin 300132, China.

Summary

This study explores how adding MgO to a modified form of barium titanate (BST) improves the performance of ceramic capacitors. By substituting some of the barium titanate with strontium and thulium-doped versions and adding MgO, the researchers achieved a higher dielectric constant and lower dielectric loss than traditional BT-MgO systems. They found that MgO dispersion at grain boundaries helps reduce losses, while co-doping increases the dielectric constant. The shift in Curie temperature was linked to oxygen vacancies. These findings suggest that adjusting doping elements and ratios can lead to better dielectric materials for use in electronic devices.

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