Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

226
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
226
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

503
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
503
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

351
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
351
MOS Capacitor01:25

MOS Capacitor

1.0K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.0K
MOSFET01:16

MOSFET

611
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
611
Characteristics of MOSFET01:17

Characteristics of MOSFET

521
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
521

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

GC-MS-Based Quantification and Chemometric Discrimination of Multi-Marker Profiles in Carthami Flos-Based Pharmacopuncture Formulations.

Journal of pharmacopuncture·2026
Same author

New learnings from the molecular pathology of the synovial tissue in rheumatoid arthritis: from pathogenesis to therapeutic targeting toward precision medicine.

Current opinion in immunology·2026
Same author

Coevolution of Human Diet and Gut Microbiome: Implications for Nutrigenomics and Cross-Population Health.

International journal of microbiology·2026
Same author

Theoretical modeling of electrochemical carbon mineralization.

The Journal of chemical physics·2026
Same author

Ethanol Extract of Catharanthus roseus Leaves Exhibits Anticancer Effects on HSC-3 Tongue Cancer Cells Associated with PI3K Suppression and PARP Cleavage.

European journal of dentistry·2026
Same author

Dental Pulp Stem Cell-Derived Secretome-Induced Reprogramming of Tongue Tumor Microenvironment.

European journal of dentistry·2026

Related Experiment Video

Updated: Sep 25, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Magnetoactive Acoustic Topological Transistors.

Kyung Hoon Lee1, Hasan Al Ba'ba'a1, Kunhao Yu1

  • 1Sonny Astani Department of Civil and Environmental Engineering, University of Southern California, Los Angeles, CA, 90089, USA.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|April 26, 2022
PubMed
Summary
This summary is machine-generated.

Researchers developed magnetoactive acoustic topological transistors that use magnetic fields to control quantum topological states in sound waves. This breakthrough enables on-demand switching of topological states and reconfigurable acoustic pathways, advancing topological acoustics.

Keywords:
acoustic metamaterialsfield-effect transistorquantum valley hall effecttopological acoustics

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Related Experiment Videos

Last Updated: Sep 25, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Area of Science:

  • Acoustics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Topological field-effect transistors (TFETs) leverage physical fields to control quantum topological states in electronics.
  • Realizing TFET concepts in acoustics remains a significant challenge.

Purpose of the Study:

  • To present magnetoactive acoustic topological transistors for on-demand control of topological states.
  • To demonstrate reconfigurable topological edges and acoustic transport using external magnetic fields.

Main Methods:

  • Harnessing magnetic fields to tune air-cavity volumes within acoustic chambers.
  • Breaking or preserving inversion symmetry to control the quantum valley Hall effect.
  • Utilizing a magneto-tuned non-topological band gap for out-of-plane wave transport control.

Main Results:

  • Demonstrated on-demand switching of topological states and reconfiguration of topological edges.
  • Achieved reversible magnetic control over acoustic transport.
  • Successfully realized topological field-effect waveguides and wave regulators.

Conclusions:

  • This work introduces a novel class of acoustic transistors with unprecedented functions.
  • The findings may significantly expand the scope of topological acoustics.
  • The technology offers potential for advanced acoustic modulation analogous to semiconductor transistors in electronics.