Diode-pumped Tm³⁺,Ho³⁺ co-doped GAGG mode-locking laser near the 2.1μm wavelength region

In this paper, a laser diode (LD) pumped passive mode-locking Tm,Ho:GAGG laser based on a semiconductor saturable absorber mirror (SESAM) is reported. By adjusting the group delay dispersions inside the laser cavity and transmissions of the output couplers (OCs), a shortest pulse duration of 10.84 ps at 2089.9 nm is achieved, the average output power is 33.17 mW and the laser runs at a 83.01 MHz repetition rate. A maximum average output power of 66.43 mW is also obtained at 2089.9 nm with a pulse duration of 16.56 ps by using an OC of 3%. To the best of our knowledge, this is the first report on the mode-locking Tm,Ho:GAGG laser.