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    Area of Science:

    • Optoelectronics
    • Semiconductor Devices
    • Photonics

    Background:

    • Avalanche photodiodes (APDs) are crucial for high-speed optical communication.
    • Germanium-on-silicon (Ge/Si) technology offers a pathway for integrating optical devices with silicon electronics.
    • O-band (1310 nm) operation is essential for current fiber optic communication infrastructure.

    Purpose of the Study:

    • To design and fabricate a high-performance waveguide Ge/Si avalanche photodiode operating at the O-band.
    • To characterize the photodiode's responsivity, bandwidth, and dark current.
    • To demonstrate the device's capability for high-speed data reception.

    Main Methods:

    • Design of a Ge/Si ridge waveguide structure with shallow trenches.
    • Fabrication using simplified processes.
    • Performance characterization including responsivity, 3-dB bandwidth, dark current, and eye-diagram measurements for 25 Gbps and 50 Gbps data rates.

    Main Results:

    • Achieved a primary responsivity of 0.96 A/W at -7.5 V.
    • Demonstrated a 3-dB bandwidth exceeding 27 GHz.
    • Recorded a low dark current of 1.8 µA at -13 V.
    • Successfully received 25 Gbps data with an open eye-diagram at -18 dBm optical power.
    • Showcased 50 Gbps data reception capability at -15 dBm optical power.

    Conclusions:

    • The developed waveguide Ge/Si APD exhibits excellent performance metrics for O-band operation.
    • The device's high speed and sensitivity make it a strong candidate for future high-speed data transmission systems.
    • Simplified fabrication processes enhance the potential for large-scale integration and commercialization.