Direct observation of terahertz topological valley transport

Topological photonics offers the possibility of robust transport and efficiency enhancement of information processing. Terahertz (THz) devices, such as waveguides and beam splitters, are prone to reflection loss owing to their sensitivity to defects and lack of robustness against sharp corners. Thus, it is a challenge to reduce backscattering loss at THz frequencies. In this work, we constructed THz photonic topological insulators and experimentally demonstrated robust, topologically protected valley transport in THz photonic crystals. The THz valley photonic crystal (VPC) was composed of metallic cylinders situated in a triangular lattice. By tuning the relevant location of metallic cylinders in the unit cell, mirror symmetry was broken, and the degenerated states were lifted at the K and K' valleys in the band structure. Consequently, a bandgap of THz VPC was opened, and a nontrivial band structure was created. Based on the calculated band structure, THz field distributions, and valley Berry curvature, we verified the topological phase transition in such type of THz photonic crystals. Further, we showed the emergence of valley-polarized topological edge states between the topologically distinct VPCs. The angle-resolved transmittance measurements identified the bulk bandgap in the band structure of the VPC. The measured time-domain spectra demonstrated the topological transport of valley edge states between distinct VPCs and their robustness against bending and defects. Furthermore, experiments conducted on a topological multi-channel intersectional device revealed the valley-polarized characteristic of the topological edge states. This work provides a unique approach to reduce backscattering loss at the THz regime. It also demonstrates potential high-efficiency THz functional devices such as topologically protected beam splitters, low-loss waveguides, and robust delay lines.