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Updated: Sep 25, 2025
10:36
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
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Sub-3 V, MHz-Class Electrolyte-Gated Transistors and Inverters
Fazel Zare Bidoky1,2, C Daniel Frisbie1
1Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States.
ACS Applied Materials & Interfaces
|April 27, 2022
Summary
Researchers developed fast-switching zinc oxide (ZnO)-based electrolyte-gated transistors (EGTs) with delays as low as 70 ns. This advancement addresses the slow switching speed challenge in EGTs for electronics applications.
Area of Science:
- Materials Science
- Electronics Engineering
- Nanotechnology
Background:
- Electrolyte-gated transistors (EGTs) are crucial for physiological recording, neuromorphic computing, sensing, and flexible electronics.
- A significant limitation of EGTs is their slow switching speed, hindering broader adoption.
Purpose of the Study:
- To fabricate and characterize n-type ZnO-based EGTs with significantly improved switching speeds.
- To investigate the impact of channel dimensions and supply voltages on signal propagation delays.
Main Methods:
- Fabrication of n-type ZnO-based EGTs.
- Characterization of propagation delays using dynamically operating inverters and five-stage ring oscillators.
- Analysis of parasitic resistances and capacitances associated with the electrolyte.
Main Results:
- Achieved signal propagation delays as short as 70 ns.
- Demonstrated stable switching at 1-10 MHz in inverter stages with 10-40 μm channel lengths.
- Identified minimization of parasitic resistances and capacitances as key to reducing switching time.
Conclusions:
- Minimizing electrolyte-associated parasitic elements is critical for enhancing EGT switching speed.
- The developed ZnO-based EGTs show potential for high-frequency applications.
- Further optimization could lead to even faster switching performance in EGTs.
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