Related Experiment Video
Updated: Sep 25, 2025
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
A two-step chemical vapor deposition process for the growth of continuous vertical heterostructure WSe2/h-BN and its
M Alahmadi1,2, F Mahvash1,3, T Szkopek3
1NanoQAM, Quebec Center for Functional Materials, Department of Chemistry, University of Quebec in Montreal Succ CentreVille, CP8888 Montreal Quebec H3C 3P8 Canada siaj.mohamed@uqam.ca.
Abstract:
The expansion of two-dimensional (2D) van der Waals heterostructure materials growth and synthesis leads to impressive results in the development and improvement of electronic and optoelectronic applications. Herein, a vertical WSe2/hBN heterostructure was obtained via a dual CVD system, in which prior to the WSe2 growth a continuous monolayer hBN was obtained on a SiO2/Si substrate. Comparing growth on SiO2/Si and quartz substrates, we found that the underlayer of hBN leads to a desorption/diffusion process of tungsten (W) and selenium (Se) producing high-quality and large-area WSe2 growth. In contrast with WSe2/SiO2 and WSe2/quartz heterostructures, the photoluminescence properties of WSe2/hBN exhibit a sharp intense WSe2 peak at 790 nm with a narrow full width at half-maximum (80 meV) due to no dangling bonds and dielectric effect of the hBN interface. The photoluminescence results suggest that the WSe2/hBN heterostructure has high crystallinity with a defect-free interface.
