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Updated: Sep 25, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Formation and physical properties of the self-assembled BFO-CFO vertically aligned nanocomposite on a CFO-buffered
Tahta Amrillah1,2, Angga Hermawan3, Shu Yin3
1Department of Nanotechnology, Faculty of Advanced Technology and Multidiscipline, Universitas Airlangga Surabaya 60115 Indonesia tahta.amrillah@ftmm.unair.ac.id.
Abstract:
Engineering the interfaces between materials of different structures and bonding nature in a well-controlled fashion has been playing a key role in developing new devices with unprecedented functionalities. In particular, direct growth of nanostructures on van der Waals substrates not only is essential for fully exploiting the potential of a wide variety of self-assembled nano-sized heterostructures but also can expand the horizons for electronic and photonic applications that involve nanostructures of specific composition and geometry. In the present work, we demonstrate the epitaxial growth of a self-assembled vertically aligned nanocomposite of magnetoelectric oxides on a flexible substrate via van der Waals epitaxy, which evidently adds an additional dimension of flexibility to similar thin-film heteroepitaxy architectures that have been mostly realized on rigid lattice-matched substrates. It is noted that the utilization of buffer layers is essential for obtaining high-quality flexible thin films with vertically aligned nanocomposite architecture. We believe that this route can provide alternative options for developing flexible thin-film devices with heteroepitaxy architectures of other functional materials.
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