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Related Experiment Video

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Artificial Synapses Based on WSe₂ Homojunction via Vacancy Migration.

Junwen Ren¹, Hongzhi Shen¹, Zeyi Liu¹

¹School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

ACS Applied Materials & Interfaces

|April 28, 2022

Summary

This study introduces a novel artificial synapse using tungsten diselenide (WSe2) homojunctions. The device effectively mimics biological synapses and transitions between short-term and long-term memory states.

Keywords:

WSe2 artificial synapse homojunction vacancies migration

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Area of Science:

Materials Science
Neuroscience
Computer Engineering

Background:

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are crucial for neuromorphic computing.
Existing 2D artificial synapses often rely on defect migration, requiring significant ion diffusion.

Purpose of the Study:

To demonstrate a novel artificial synapse based on a lateral WSe2 homojunction.
To explore the emulation of biological synaptic functions and memory transitions.

Main Methods:

Fabrication of a lateral WSe2 homojunction artificial synapse.
Utilizing negative gate voltage to induce Se vacancy migration.
Investigating the impact of vacancy accumulation on device resistance states.

Main Results:

Achieved a transformation from high-resistance state (HRS) to low-resistance state (LRS) via Se vacancy migration.
Demonstrated efficient emulation of biological synaptic functions with substantial weight change.
Successfully transitioned the device between short-term memory (STM) and long-term memory (LTM) states.

Conclusions:

The lateral WSe2 homojunction offers a promising platform for artificial synapses.
The device's ability to emulate synaptic functions and memory states is beneficial for large-scale integration.
This work advances the development of transistor-based artificial synapses for neuromorphic computing.