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Published on: July 24, 2015
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Interfacial thermal transport between graphene and diamane.
Yang Hong1, Joshua S Kretchmer1
1School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
The Journal of Chemical Physics
|April 30, 2022
Summary
We studied thermal resistance between graphene and diamane, a single layer of diamond. Graphene-diamane heterostructures show potential for electronic applications due to high thermal conductivity and low interfacial resistance.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Diamane, a single layer of diamond, exhibits unique mechanical, thermal, and electronic properties.
- Previous studies highlighted diamane's exceptionally high in-plane thermal conductivity.
- Graphene-diamane interfaces are promising for advanced electronic applications.
Purpose of the Study:
- To investigate the interfacial thermal resistance (R) between graphene and diamane.
- To understand the factors influencing thermal transport across graphene-diamane bilayers.
- To assess the potential of graphene-diamane heterostructures in electronic devices.
Main Methods:
- Non-equilibrium classical molecular dynamics simulations were employed.
- Calculations were performed at room temperature for pristine graphene and AB-stacked diamane.
- System parameters including stacking, temperature, coupling strength, strain, and hydrogenation were varied.
Main Results:
- The interfacial thermal resistance (R) for pristine graphene and AB-stacked diamane was calculated as 1.89 × 10-7 K m2/W.
- Results are explained by the overlap of phonon density of states between the layers.
- Interfacial thermal conductance increased by ~50% under 8% strain, contrasting with diamane's reduced in-plane conductivity.
Conclusions:
- Graphene-diamane bilayers exhibit thermal resistance comparable to other graphene/semiconductor systems.
- Strain significantly impacts thermal transport, enhancing inter-plane conductance.
- The combination of high in-plane thermal conductivity and low inter-plane resistance makes these heterostructures highly suitable for electronic applications.
