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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Correction: Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio

Jana Hrdá1,2, Valéria Tašková1, Tatiana Vojteková1,3

  • 1Institute of Electrical Engineering, SAS Dúbravská cesta 9 84104 Bratislava Slovakia michaela.sojkova@savba.sk.

RSC Advances
|May 2, 2022
PubMed

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Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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