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Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
Published on: May 27, 2020
Hot carrier relaxation in Cs2TiI Br6- (y = 0, 2 and 6) by a time-domain ab initio study
Hejin Yan1, Yingfeng Li1, Xiang Li1
1State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University Beijing China 102206 liyingfeng@ncepu.edu.cn.
Abstract:
Cs2TiI Br6- is a potential light absorption material for all-inorganic lead free perovskite solar cells due to its suitable and tunable bandgap, high optical absorption coefficient and high environmental stability. However, solar cells fabricated based on Cs2TiI Br6- do not perform well, and the reasons for their low efficiency are still unclear. Herein, hot carrier relaxation processes in Cs2TiI Br6- (y = 0, 2 and 6) were investigated by a time-domain density functional theory combined with the non-adiabatic molecular dynamics method. It was found that the relaxation time of the hot carriers in Cs2TiI Br6- ranges from 2-3 ps, which indicates that the hot carriers within 10 nm from the Cs2TiI Br6- /TiO2 interface can be effectively extracted before their energy is lost completely. The carrier-phonon non-adiabatic coupling (NAC) analyses demonstrate that the longer hot electron relaxation time in Cs2TiI2Br4 compared with that in Cs2TiBr6 and Cs2TiI6 originates from its weaker NAC strength. Furthermore, the electron-phonon interaction analyses indicate that the relaxation of hot electrons mainly comes from the coupling between the electrons distributed on the Ti-X bonds and the Ti-X vibrations, and that of hot holes can be attributed to the coupling between the electrons distributed on the X atoms and the distortions of [TiI Br6- ]2-. The simulation results indicate that Cs2TiI2Br4 should be better than Cs2TiBr6 and Cs2TiI6 to act as a light absorption layer based on the hot carrier energy loss, and the hot electron relaxation time in Cs2TiI Br6- can be adjusted by tuning the proportion of the I element.
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