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Published on: April 12, 2018
Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage
1Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, College of Physics and Electronics Science, Hunan Normal University Changsha 410081 People's Republic of China douwei139@163.com.
Abstract:
Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD) at room temperature. The threshold voltage of such devices can be modulated from -0.13 to 0.5 V by the top gate (TG), which switches the device from depletion-mode to enhancement-mode. High performance with a current on/off ratio (∼2.1 × 106), subthreshold swing (76 mV per decade), operating voltage (1.0 V), and field-effect mobility (∼2.6 cm2 V-1 s-1) are obtained. Such DG TFTs are promising for ion-sensitive field-effect transistors sensor applications with low-power consumptions.
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