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Related Concept Videos

UV–Vis Spectrometers01:14

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The absorbance of UV and visible (UV–visible) radiations is measured using a UV–visible spectrophotometer. Deuterium lamps, which emit UV radiation, and tungsten lamps, which produce radiation in the visible region, are used as light sources in UV–visible spectrophotometers. A monochromator or prism is used for diffraction grating, i.e., to split the incoming radiation into different wavelengths. A system of slits is used to focus the desired wavelength on the sample cell.
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Related Experiment Video

Updated: Sep 24, 2025

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
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A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate

Jiawang Chen1,2, Liang Li1,2,3, Penglai Gong4

  • 1Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.

ACS Nano
|May 2, 2022
PubMed
Summary

This study introduces a new ternary telluride, InSiTe3, for fast-response, broadband photodetectors. The material demonstrates ultrafast speeds and stable performance, paving the way for advanced optoelectronic devices.

Keywords:
InSiTe3broadband photodetectorfast responsetransistortwo-dimensional materials

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Two-dimensional materials (2DMs) offer potential for broadband photodetectors but often suffer from slow response speeds, limiting practical applications.
  • Developing 2DM photodetectors with both high speed and broadband detection is crucial for applications like imaging and night vision.

Purpose of the Study:

  • To demonstrate a submicrosecond-response photodetector utilizing the ternary telluride InSiTe3.
  • To investigate the photoresponse characteristics, including speed and spectral range, of InSiTe3-based photodetectors.
  • To assess the stability and reversibility of the InSiTe3 photodetector's performance.

Main Methods:

  • Fabrication of a photodetector device using InSiTe3, a 2D material with trigonal symmetry and layered structure.
  • Characterization of the photodetector's photoresponse speed, measuring response times in the submicrosecond range.
  • Testing the photodetector's broadband detection capabilities across ultraviolet (UV) to near-infrared (NIR) wavelengths.
  • Evaluation of the device's stability and reversibility over numerous operational cycles.

Main Results:

  • The InSiTe3 photodetector achieved an ultrafast photoresponse time between 545-576 nanoseconds.
  • Broadband photodetection was confirmed, covering the spectral range from 365 nm (UV) to 1310 nm (NIR).
  • The photodetector exhibited excellent stability and reversibility, maintaining consistent performance over 200,000 switching cycles.

Conclusions:

  • InSiTe3 is a promising 2D material for developing high-performance photodetectors.
  • The demonstrated ultrafast response and broadband capabilities of InSiTe3-based photodetectors address key limitations in current 2DM optoelectronics.
  • This work highlights InSiTe3 as a viable candidate for future fast-response, broadband optoelectronic device applications.