2D spin transport through graphene-MnBi₂Te₄heterojunction

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Two-dimensional (2D) magnetic semiconductors are crucial for developing nonvolatile magnetoelectric nanodevices.
• MnBi₂Te₄ represents the first discovered antiferromagnetic topological insulator, offering unique electronic properties.
• Graphene is a key material for future all-carbon circuits, necessitating compatible conductive connections.

Purpose of the Study:

• To investigate the electronic transport properties of graphene-MnBi₂Te₄-graphene junctions.
• To assess the suitability of MnBi₂Te₄ as a component in all-carbon electronic circuits.
• To explore the potential of these junctions for spin filtering applications.

Main Methods:

• Fabrication and characterization of lateral graphene-MnBi₂Te₄-graphene heterostructures.
• Measurement of electronic transport properties, including contact resistance and conductance.
• Analysis of spin polarization in the currents flowing through the MnBi₂Te₄ layer.

Main Results:

• Graphene-MnBi₂Te₄ interfaces demonstrate excellent Ohmic contact behavior.
• The junctions exhibit high spin-polarized currents, indicating potential for spintronic applications.
• Lateral junctions show significantly lower energy barriers and higher electron conductance compared to typical van der Waals junctions.

Conclusions:

• MnBi₂Te₄ is a promising material for integration into future all-carbon circuits due to its Ohmic contact properties with graphene.
• The high spin polarization and enhanced conductance of these junctions are beneficial for 2D spin filtering devices.
• These findings provide a foundation for advancing research in 2D spintronics and magnetoelectric nanodevices.