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Oxygen relocation during HfO2 ALD on InAs.

Giulio D'Acunto1,2, Esko Kokkonen3, Payam Shayesteh1,2

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Summary
This summary is machine-generated.

Atomic layer deposition (ALD) shows initial growth anomalies on InAs substrates. Oxygen relocation from InAs to HfO2 layers offers new control over initial ALD thickness and self-cleaning effects for advanced electronics.

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Atomic layer deposition (ALD) is crucial for electronic device fabrication, known for its atomic-scale accuracy and layer-by-layer growth.
  • ALD typically exhibits a constant growth rate per cycle in its steady-state phase, independent of the substrate.
  • The initial stage of ALD, however, deviates from steady-state kinetics and is heavily influenced by substrate surface composition.

Purpose of the Study:

  • To investigate the initial growth phase of HfO2 ALD on InAs substrates.
  • To understand the role of substrate surface composition and oxide layers in the early stages of ALD.
  • To explore the implications of these findings for controlling ALD processes and self-cleaning effects in III-V semiconductors.

Main Methods:

  • Atomic layer deposition (ALD) of HfO2 on InAs substrates with native or thermal oxide layers.
  • Analysis of the initial ALD phase, focusing on growth kinetics, chemistry, and surface interactions.
  • Investigation of oxygen relocation from the InAs substrate to the HfO2 overlayer.

Main Results:

  • Evidence of oxygen relocation from InAs oxide (thermal or native) to the HfO2 overlayer during the initial ALD phase.
  • Demonstrated control over the initial ALD layer thickness by manipulating pre-ALD substrate surface conditions.
  • Complete removal of InAs native oxide (even >1 monolayer) within the first ALD half-cycle, with a self-limiting HfO2 layer thickness of approximately one monolayer.

Conclusions:

  • The initial ALD phase is significantly influenced by substrate surface chemistry, challenging the universal applicability of the ligand exchange model.
  • Oxygen relocation is a key phenomenon in the early stages of HfO2 ALD on InAs.
  • Findings offer enhanced control over the self-cleaning effect in III-V semiconductors, vital for next-generation high-speed Metal-Oxide-Semiconductor (MOS) devices.