Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Integrating tunable electrical transport in semiconductors and spin configurations in magnets is crucial for information technologies.
• Existing two-dimensional (2D) magnetic semiconductors are electrically insulating in their magnetic phase, limiting their applications.
• There is a need for materials that combine semiconductor and magnetic properties with tunable charge transport.

Purpose of the Study:

• To demonstrate tunable electron transport within the magnetic phase of a 2D semiconductor.
• To investigate the coupling between magnetic order and charge transport in CrSBr.
• To explore the potential of CrSBr for characterizing magnetic order and controlling charge transport.

Main Methods:

• Utilized magnetotransport measurements to characterize the layer-dependent magnetic order of CrSBr down to the monolayer.
• Investigated the sensitivity of magnetoresistance to magnetic order and magnetic defects.
• Employed electrostatic gating to tune carrier concentration and control magnetoresistance.

Main Results:

• Demonstrated tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr.
• Revealed strong coupling between the magnetic order of CrSBr and its charge transport properties.
• Uncovered a regime of magnetoresistance coupled to magnetic defects, which can be dynamically tuned by electrostatic gating.

Conclusions:

• CrSBr is a promising 2D magnetic semiconductor with tunable electron transport in its magnetic phase.
• The strong coupling between magnetic order and charge transport in CrSBr allows for characterization of magnetic properties via magnetotransport.
• Electrostatic control of magnetoresistance in CrSBr offers a new mechanism for manipulating charge transport in 2D magnets.