Mixture of quantum dots and ZnS nanoparticles as emissive layer for improved quantum dots light emitting diodes
Taeyoung Song1, Jun Young Cheong1, Hyunjin Cho1
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology 291 Daehak-ro, Yuseong-gu Daejeon 305-701 Republic of Korea dyjeon@kaist.ac.kr.
Abstract:
Recently, quantum dots based light-emitting diodes (QLEDs) have received huge attention due to the properties of quantum dots (QDs), such as high photoluminescence quantum yield (PLQY) and narrow emission. To improve the performance of QLEDs, reducing non-radiative energy transfer is critical. So far, most conventional methods required additional chemical treatment like giant shell and/or ligands exchange. However that triggers unsought shifted emission or reduced PLQY of QDs. In this work, we have firstly suggested a novel approach to improve the efficiency of QLEDs by introducing inorganic nanoparticles (NPs) spacer between QDs, without additional chemical treatment. As ZnS NPs formed a mixture layer with QDs, the energy transfer was reduced and the distance between the QDs increased, leading to improved PLQY of mixture layer. As a result, current efficiency (CE) of the QLED device was improved by twice compared with one using only QDs layer. This is an early report on utilizing ZnS NPs as an efficient spacer, which can be utilized to other compositions of QDs.


