Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency.

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Perovskite materials offer unique optoelectronic properties.
• Photodetectors (PDs) are crucial for light detection and communication.
• Developing stable and efficient PDs remains a key challenge.

Purpose of the Study:

• To fabricate efficient and stable perovskite photodetectors (PDs).
• To evaluate the performance of CH3NH3PbI3-based PDs across a wide spectral range.
• To assess the environmental stability of the fabricated devices.

Main Methods:

• Fabrication of CH3NH3PbI3-based photodetectors (PDs).
• Measurement of external quantum efficiency (EQE) and responsivity (R) under low bias (-5 V).
• Assessment of device stability upon exposure to ambient air for 24 hours.

Main Results:

• Achieved maximum external quantum efficiency (EQE) of 140,000% in the UV-to-NIR region.
• Demonstrated high responsivity (R) under a low bias of -5 V.
• Exhibited outstanding environmental stability with only 10% EQE degradation after 24 hours in air.

Conclusions:

• The fabricated CH3NH3PbI3 photodetectors exhibit excellent performance and stability.
• These perovskite PDs hold significant potential for visible light communication applications.
• The study highlights the viability of perovskites in advanced optoelectronic devices.