Related Experiment Video
Updated: Sep 24, 2025

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
Published on: February 10, 2014
Motion sensors achieved from a conducting polymer-metal Schottky contact
Yang Zhou1, Jian Fang1, Hongxia Wang1
1Institute for Frontier Materials, Deakin University Geelong Victoria 3216 Australia tong.lin@deakin.edu.au.
Abstract:
Mechanical-to-electrical energy conversion devices show potential applications in the detection of movements. Previous studies on these sensor devices are mainly based on piezoelectricity or triboelectricity, which typically generates AC signals. In this study, a movement sensor that generated DC signals based on a conducting polymer-metal Schottky diode was prepared for the first time. Using the Al|poly(3,4-ethylenedioxythiophene)|Au device as a model, we showed that the sensor device could detect the touch and sliding movements. Both the pressure of the Al electrode touching the PEDOT surface and its sliding speed affected the voltage outputs. The device showed a high response speed of 1.7 s at 39.8 kPa. The modified device can even measure the sliding speed. The DC output allows the use of electrical energy for running other electronic devices. A conducting polymer-metal Schottky contact may be useful for the development of DC output movement sensors.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barrier Diode
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

