Related Experiment Video
Updated: Sep 24, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Strain sensitivity of band structure and electron mobility in perovskite BaSnO3: first-principles calculation
Yaqin Wang1,2, Runqing Sui1, Mei Bi1
1Key Laboratory of Fluid and Power Machinery, School of Material Science and Engineering, Xihua University Chengdu 610039 China.
Abstract:
A first-principles electronic structure calculation is utilized to contrastively investigate the crystal structure, band structure, electron effective mass and mobility of perovskite BaSnO3 under hydrostatic and biaxial strain. Strain-induced changes in relative properties are remarkable and more sensitive to hydrostatic strain than biaxial strain. The structure of BaSnO3 remains cubic under hydrostatic strain, while it becomes tetragonal under biaxial strain. Originating from the strain sensitivity of the Sn 5s orbitals in the conduction band minimum, the band gaps of BaSnO3 decrease for both types of strain from -3% to 3%. BaSnO3 under tensile hydrostatic strain exhibits higher electron mobility than it does under tensile biaxial strain because of the smaller electron effective mass in the corresponding strain. In contrast, the opposite phenomenon exists in compressive strain. Our results demonstrate that strain could be an alternative way to modify the band gap and electron mobility of BaSnO3.
Related Concept Videos
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Types of Semiconductors

