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Updated: Sep 24, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
The geometrical structure and electronic properties of trivalent Ho3+ doped Y2O3 crystals: a first-principles study
Meng Ju1,2, Lu Pan1, Chuanzhao Zhang2
1School of Physical Science and Technology, Southwest University Chongqing 400715 China zhongmm@swu.edu.cn xiaotianwang@swu.edu.cn.
Abstract:
Trivalent rare-earth holmium ion (Ho3+) doped yttrium oxide (Y2O3) has attracted great research interest owing to its unique optoelectronic properties and excellent performances in many new-type laser devices. But the crystal structures of the Ho3+-doped Y2O3 system (Y2O3 : Ho) are still unclear. Here, we have carried out a first-principle study on the structural evolution of the trivalent Ho3+ doped Y2O3 by using the CALYPSO structure search method. The results indicate that the lowest-energy structure of Ho3+-doped Y2O3 possesses a standardized monoclinic P2 phase. It is found that the doped Ho3+ ion are likely to occupy the sites of Y3+ in the host crystal lattice, forming the [HoO6]9- local structure with C 2 site symmetry. Electronic structure calculations reveal that the band gap value of Ho3+-doped Y2O3 is approximately 4.27 eV, suggesting the insulating character of Y2O3 : Ho system. These findings could provide fundamental insights to understand the atomic interactions in crystals as well as the information of electronic properties for other rare-earth-doped materials.
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