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Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

Jiahe Huang1, Xiaofeng Zhao2, Hongyan Zhang1

  • 1School of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.

RSC Advances
|May 6, 2022
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