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Updated: Sep 24, 2025

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
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Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Published on: July 2, 2012

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Correction: Efficient broadband light absorption in thin-film a-Si solar cell based on double sided hybrid

Fazal E Subhan1, Aimal Daud Khan2,3, Fazal E Hilal1

  • 1Center for Advanced Studies in Energy, University of Engineering & Technology Peshawar 25000 Pakistan adnan.daud@uetpeshawar.edu.pk.

RSC Advances
|May 6, 2022
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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