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Updated: Sep 24, 2025

Development of Efficient OLEDs from Solution Deposition
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High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature.

Kyoung Woo Park1,2, Seunghee Lee1, Hyunkoo Lee3

  • 1Smart & Soft Materials & Devices Laboratory (SSMD), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu Daejeon 34141 South Korea shkp@kaist.ac.kr.

RSC Advances
|May 6, 2022
PubMed
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Highly moisture-resistive hydrogenated silicon oxynitride (H:SiON) thin films offer superior barrier properties for top-emission organic light-emitting diodes (TEOLEDs). These films enhance device stability and longevity.

Area of Science:

  • Materials Science
  • Thin Film Technology
  • Semiconductor Devices

Background:

  • Organic light-emitting diodes (OLEDs) require robust encapsulation to prevent degradation from moisture and oxygen.
  • Existing encapsulation methods often involve complex multi-layer structures or less effective barrier materials.
  • Developing single-layer, highly transparent, and moisture-resistant films is crucial for advancing OLED technology.

Purpose of the Study:

  • To develop and characterize highly moisture-permeation resistive and transparent single-layer thin films for top-emission organic light-emitting diode (TEOLED) encapsulation.
  • To investigate the effect of hydrogen incorporation on the properties of silicon oxynitride (SiON) films.
  • To evaluate the performance of these films under various environmental and mechanical stress conditions.

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Main Methods:

  • Deposition of hydrogenated silicon oxynitride (H:SiON) thin films using plasma-enhanced chemical vapor deposition (PECVD) with SiH4, N2O, NH3, and H2 at 100 °C.
  • Characterization of film properties including optical transmittance, reflectance, and water vapor transmission rate (WVTR).
  • Testing of film flexibility and barrier stability through repeated bending tests and long-term TEOLED illumination.

Main Results:

  • The H:SiON films exhibited superior moisture barrier properties compared to conventional SiON and SiN films, with a WVTR below 5 × 10⁻⁵ g/m²/day.
  • An 80 nm thick H:SiON film demonstrated excellent optical properties and a significant reduction in water permeation.
  • Flexible H:SiON films maintained their barrier integrity after 10,000 bending cycles, and TEOLEDs encapsulated with H:SiON showed stable illumination for over 720 hours.

Conclusions:

  • The incorporation of hydrogen into SiON films significantly enhances their moisture barrier properties and optical characteristics.
  • Single-layer H:SiON films provide effective encapsulation for TEOLEDs, improving device stability and operational lifetime.
  • The developed H:SiON thin films represent a promising solution for advanced encapsulation in flexible and high-performance electronic devices.