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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 20, 2026

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light

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Published on: September 12, 2014

Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure.

Thanh Nguyen^1,2,3, Toan Dinh^1,2,3, John Bell¹

¹School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia.

ACS Applied Materials & Interfaces

|May 6, 2022

Summary

This study introduces a novel 3C-SiC/Si heterostructure that harvests light energy to power itself and simultaneously measure temperature. This self-powered sensor offers a promising solution for the Internet of Things.

Keywords:

lateral photovoltaic effect light harvesting monolithic structure self-powered sensor silicon carbide temperature sensors

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Last Updated: Jun 20, 2026

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Area of Science:

Materials Science
Semiconductor Physics
Sensor Technology

Background:

Energy harvesting is crucial for the Internet of Things (IoT).
Self-powered sensors reduce reliance on external power sources.
Existing temperature sensors often require separate power supplies.

Purpose of the Study:

To develop a novel monolithic 3C-SiC/Si heterostructure for energy harvesting and temperature sensing.
To evaluate the performance of this heterostructure as a light-harvesting, self-powered temperature sensor.
To explore its potential applications in the Internet of Things.

Main Methods:

Fabrication and characterization of a monolithic 3C-SiC/Si heterostructure.
Evaluation of photon energy conversion efficiency.
Measurement of thermoresistive properties and temperature sensing capabilities.
Assessment of sensor performance under varying light intensities and temperatures.

Main Results:

The 3C-SiC/Si heterostructure exhibits a negative temperature coefficient of resistance (TCR) from -3500 to -8200 ppm/K.
A lateral photovoltage of up to 58.8 mV was generated under 12,700 lx illumination.
The sensor demonstrated high sensitivity in self-power mode (360 μV·K^-1 at 12,700 lx).
The sensor successfully measured temperatures up to 300 °C while self-powered.

Conclusions:

The monolithic 3C-SiC/Si heterostructure effectively harvests photon energy for self-powering and temperature sensing.
This technology presents a significant advancement for self-powered sensors in demanding environments.
It opens new possibilities for integrated sensing and energy harvesting solutions in IoT applications.